In most switching applications, the bootstrap circuit is widely used to drive the high-side metal-oxidesemiconductor field-effect transistor (MOSFET). This bootstrap circuit technique has the ...

The High-Voltage Integrated Circuit (HVIC) gate driver family is designed to drive an N-channel MOSFET or IGBT up to 600 V. One of the most common methods to supply power to the high-side gate drive ...

A question arose at Electronics Weekly after Rohm introduced an 8pad isolated for GaN transistors. In the BM6GD11BFJ-LB data sheet is a half-bridge application circuit (figure 28, right, slightly ...

Check out our coverage of APEC 2024. This article is part of the TechXchange: Gallium Nitride (GaN). The GaN FET is becoming widely preferred in power systems such as high-frequency DC-DC converters.

How is peak current defined? A close look at datasheet headlines and how they vary. A case study that compares different drivers and peak currents. One question often comes up when considering what ...