China's Semiconductor Manufacturing International (SMIC) has kicked off volume production of 14nm FinFET chips, and plans to move a newer 12nm FinFET process to risk production by the end of 2019, ...

IC Compiler II and Design Compiler Graphical provide a complete digital implementation flow delivering optimized power, performance, area, and full via pillar support StarRC, PrimeTime, NanoTime, and ...

MILPITAS, Calif.--(BUSINESS WIRE)--GLOBALFOUNDRIES today accelerated its leading-edge roadmap with the launch of a new technology designed for the expanding mobile market. The company’s 14nm-XM ...

First collaboration milestone speeds validation of IP and design correlation on UMC's 14-nm FinFET process Process qualification vehicle validates key process and IP test structures Tapeout helps ...

High-quality DesignWare Interface and Analog IP Optimized for High Performance and Low Power in AI, Cloud Computing, and Mobile SoCs MOUNTAIN VIEW, California, June 27, 2019 /PRNewswire/ -- Highlights ...

The gate-all-around (GAA) semiconductor manufacturing process, also known as gate-all-around field-effect transistor (GAA-FET) technology, defies the performance limitations of FinFET by reducing the ...

With continuing finFET device process scaling, micro loading control becomes increasingly important due to its significant impact on yield and device performance [1-2]. Micro-loading occurs when the ...

A smaller version of existing 16nm technology According to industry sources, TSMC is planning to introduce a 12 nanometer half-node process to enhance competition with 28nm and lower process nodes… A ...

As the need to scale transistors to ever-smaller sizes continues to press on technology designers, the impact of parasitic resistance and capacitance can approach or even outpace other aspects of ...

The next frontier in the electronics industry is the FinFET, a new type of multi-gate 3D transistor that offers tremendous power and performance advantages compared to traditional, planar transistors.