A technical paper titled “Gate Drive Circuit Suitable for a GaN Gate Injection Transistor” was published by researchers at Nagoya University. “A GaN gate injection transistor (GIT) has great potential ...

GaN power transistors can shrink AC‑DC power supplies and cut losses but, to get the best out of them, their gate drive waveform needs careful attention. As a German team pointed out at ISSCC, GaN ...

A gate design cuts leakage, raises threshold voltage, and improves stability in GaN power devices, clearing a barrier to wider use in power systems.

An advanced gate design could reshape EV and data center power systems.

Researchers at the Indian Institute of Science (IISc) have uncovered fundamental insights into designing gallium nitride (GaN ...

Multilevel nonvolatile transistor memories were fabricated using star-shaped poly((4-diphenylamino)benzyl methacrylate) (star-PTPMA) electret dielectric for charge storage and ...

New chipmaking systems boost the energy-efficient performance of Gate-All-Around transistors and wiring at 2nm and beyondViva™ pure radical ...

Gate-All-Around Transistors: In a new design, the transistor channel is made up of an array of vertical nanowires. The gate surrounds all the nanowires, which improves its ability to control the flow ...

GaN power transistors are becoming the gold standard for fast compact mains power switching – GaN HEMTs have no reverse recovery charge and can be designed with low on-resistance and low parasitic ...

Two distinct structures have been developed for the enhancement mode of GaN-based high-electron–mobility transistors (HEMTs). These two modes are the metal-insulator–semiconductor (MIS) structure, 2 ...

Gallium nitride, or GaN, is seen as a successor to silicon in high-power electronics because it can reduce energy losses ...