Shrinking ferroelectric tunnel junctions can significantly boost their performance in memory devices, as reported by researchers from Science Tokyo. The team fabricated nanoscale junctions directly on ...

The story of computing is one of progressively better, faster, and more efficient machines powered by incremental-yet-substantial improvements made to every piece of tech they contain. The ...

TOKYO--(BUSINESS WIRE)--Kioxia Corporation, a world leader in memory solutions, today announced that it has begun sampling new Universal Flash Storage (2) (UFS) Ver. 4.1 embedded memory devices, ...

A research team led by Prof. Long Shibing from the University of Science and Technology of China (USTC) of the Chinese Academy of Sciences (CAS) has, for the first time, made spintronic neuromorphic ...

Microsoft's cloud and software businesses get most of the attention these days, but it's worth paying attention to the ...

Memory manufacturers are pessimistic that they can meet demand through 2026.

TL;DR: KIOXIA's new UFS Ver. 4.1 embedded memory devices, featuring 8th generation BiCS FLASH with CBA technology, deliver up to 45% faster performance and 20% better power efficiency for mobile ...

The storage element in NAND flash memory is the floating gate MOSFET transistor. These devices are similar to a standard MOSFET device, other than there is an addition isolated gate. When a NAND flash ...

Organic transistor memory devices integrate organic semiconducting materials with field‐effect transistor architectures to achieve nonvolatile data storage. These devices harness charge trapping ...

ransparent, flexible electronics made from biodegradable polymers disappear in water within three days. (Nanowerk News) The use of electronics in various forms is on the rise, from wearable devices ...

This is happening even though data center servers and smartphones use different types of chips. The key distinction between consumer electronics and data centers is what they need ...

SAN JOSE, Calif.--(BUSINESS WIRE)--KIOXIA America, Inc. today announced that it has begun sampling new Universal Flash Storage (UFS) Ver. 4.1 embedded memory devices, reinforcing its leadership in ...