There is a great deal of activity in wide bandgap (WBG) power electronics lately, with Gallium Nitride (GaN) and Silicon Carbide (SiC) devices getting a lot of attention due to the technologies’ ...
Integrated circuit (IC) sizes continue to grow as they meet the compute requirements of cutting-edge applications such as artificial intelligence (AI), autonomous driving, and data centers. As design ...
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Researchers achieve record-breaking RF GaN-on-Si transistor performance for high-efficiency 6G power amplifiers
Imec researchers have set a new benchmark in RF transistor performance for mobile applications. They present a gallium nitride (GaN) MOSHEMT (metal-oxide-semiconductor high-electron-mobility ...
San Antonio, TX. GaN Systems today unveiled what it calls the industry’s highest current and power-efficient 100-V GaN power transistor, the 100-V, 120-A, 5-mΩ GaN E-HEMT device (GS-010-120-1-T). It ...
A discovery by an international team of scientists has revealed room-temperature ferroelectric and resistive switching behaviors in single-element tellurium (Te) nanowires, paving the way for ...
Power management in contemporary system-on-chip (SoC) designs is almost unimaginably complex. Processors and other chip cores turn on and off as needed. Advanced features such as dynamic voltage and ...
Alternatively, you may want to connect its inputs and output in parallel with IC1.C to increase its drive power to the transistor test circuit. IC1.A and IC1.B together with R2, R3 and C1 form an ...
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