X-FAB's XbloX platform accelerates SiC MOSFET development by using pre-qualified modular blocks to reduce design risks ...

SiC MOSFETs are usually susceptible to damage as a result of short-circuiting events because of the fast switching speeds and low on-state resistance. 3 A team of researchers affiliated with the ...

Silvaco Group, Inc., a provider of TCAD and EDA software, has announced that Excelliance MOS has adopted its Design Technology Co-Optimization (DTCO) flow, incorporating Victory TCAD and UTMOST IV ...

Wide bandgap semiconductors have proven to be more profitable and effective than traditional silicon-based semiconductors in the electronic instrument industry. Wide bandgap silicon carbide (SiC) ...

ROHM Semiconductor today announced it has developed the latest device of its EcoSiC™ series: the 5 th Generation SiC MOSFETs optimized for high‑efficiency power applications. This technology is ...

The "Global SiC Power Device Market (2024 Edition): Analysis By Voltage (300-900 V, 901-1700 V and Above 1700 V), By Type, By Application, By Region, By Country: Market Insights and Forecast ...

After years of research and development in the lab, Silicon Carbide (SiC) is poised to make its mark as a commercially available compound semiconductor technology for energy efficient power control ...

Device makers across the globe are ramping silicon carbide (SiC) manufacturing, with growth set to really take off starting in 2024. It’s been almost five years since Tesla and STMicroelectronics ...

You don’t have to be a dedicated follower of the transportation industry to know it is in the early stages of a significant transition, away from the rumbling internal combustion engine to the quiet ...

Santa Clara, CA and Kyoto, Japan, Dec. 06, 2023 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced an expansion to their SPICE model lineup for the LTspice ®[1] circuit simulator, increasing its ...

A conceptual diagram of diluted hydrogen annealing of SiO 2 /SiC structure. The background scenery is inside the Class 1 cleanroom located in Graduate School of Engineering, The University of Osaka.