The chipmaker will shed light on a series of changes it's making to transistors that ideally will keep a lid on the growing problem of power consumption. Michael Kanellos is editor at large at CNET ...
There is a great deal of activity in wide bandgap (WBG) power electronics lately, with Gallium Nitride (GaN) and Silicon Carbide (SiC) devices getting a lot of attention due to the technologies’ ...
The 2D devices fabricated using CDimension’s ultra-thin films have demonstrated up to a 1,000X improvement in ...
Intelligent soft switching with AI support promises to reduce switching losses in power transistors by up to 95 per cent.
Integrated circuit (IC) sizes continue to grow as they meet the compute requirements of cutting-edge applications such as artificial intelligence (AI), autonomous driving, and data centers. As design ...
Designed for the toughest engineering environments, NXP Semiconductors N.V. (NASDAQ: NXPI) today unveiled its new XR family of “eXtremely Rugged” LDMOS RF power transistors. The XR family is designed ...
Herein, wafer-scale 8-nm films of Sn-doped gallium oxide (Ga 2 O 3) were fabricated via physical vapor deposition at room temperature. Using these films, 8-nm Sn-doped Ga 2 O 3 field-effect ...
Semiconducting CNTs possess several advantages over traditional silicon, including higher carrier mobility and better electrostatic control at nanoscale dimensions. These properties make them ...
PowiGaN technology permits manufacture of 94% efficient power supplies suitable for regions with frequent brown-outs and line surges InnoSwitch3 ICs incorporating PowiGaN technology permits ...
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