Abstract: We demonstrated 3D vertical Gate-All-Around (GAA) vertical-channel FeFET using ferroelectric (FE) Zr-doped HfO 2 (HZO) and indium-gallium oxide (IGO) channel. Subthreshold swing of 90 mV/dec ...
The datasets, including documents (collectively referred to as “Materials”), are uploaded as “Information” in accordance with Executive Order No. 2, 2016, titled “Operationalizing in the Executive ...
New NASA Administrator Jared Isaacman announced a major overhaul of the agency's Artemis moon program Friday, acknowledging that the agency's plan to land astronauts on the moon in 2028 was not ...
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