Abstract: This article presents a P-well (PW)/Deep N-well (DNW) junction-based single-photon avalanche diode (SPAD), featuring a 10-μm active area pitch in standard 65-nm CMOS technology. The dark ...
Get the Well Enough newsletter with Harry Bullmore for tips on living a healthier, happier and longer life Get the Well Enough email with Harry Bullmore You check your smartwatch after a run. Your ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results