Abstract: Series-connection of silicon carbide (SiC)-MOSFETs has significant advantages in simplifying the topology and control of high-voltage converters. However, the challenges of high isolation ...
Abstract: A novel split-gate-trench MOSFET integrated with normal gate and built-in channel diode (BCD) in the same trench is proposed and simulated with Sentaurus TCAD in this paper. Compared with ...
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